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Design of a P-type cold-source field-effect transistor with 2D MA2Z4: a study toward performance limits
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DOI：10.1088/1361-6463/ae5e85.png)
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Abstract
En 中文
By integrating the excellent electrostatic control capability of two-dimensional semiconductors with the 'cold source' device concept, this work proposes a low-power p-type field-effect transistor design based on MA(2)Z(4) materials, using monolayer MoSi2N4 as the channel and its metallic counterpart TaSi2N4 as the source and drain electrodes. First-principles-based quantum transport simulations reveal that the TaSi2N4/MoSi2N4 interface forms a high-quality p-type ohmic contact with a contact resistance as low as 748.1 Omega mu m. Benefiting from the carrier-filtering effect induced by the characteristic bandgap near the Fermi level in the 'cold source' TaSi2N4, the proposed device exhibits outstanding switching performance: at a low source-drain voltage, it delivers an on-state current up to 1610 mu A mu m(-1), an off-state current as low as 0.05 mu a mu m(-1), a switching ratio exceeding 3 & times; 10(4), and a near-ideal subthreshold swing of 64.5 mV dec(-1).
Keywords:
MoSi2N4
cold source
field-effect transistor
subthreshold swing
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3.2
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2.6W
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4.9W
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