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Development of wide-bandgap avalanche photodetectors for the ultraviolet spectral region
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DOI：10.1117/1.AP.8.2.024001.png)
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Abstract
En 中文
Recent advances in the development of ultraviolet avalanche p-i-n photodiodes composed of the III-N and SiC compound semiconductors have established that these materials can provide distinct advantages over the current Si-CMOS-based photodetector technology. We review the early development of semiconductor photodetectors and the current understanding and state-of-the-art for the III-N and SiC photodetectors. Particular emphasis is devoted to considering the potential use of these materials for single-photon avalanche ultraviolet photodetectors operating in Geiger-mode.
Keywords:
avalanche photodiode
ultraviolet
gallium aluminum nitride
silicon carbide
Geiger-mode
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18.8
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961
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3.6K
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