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DieCARE: Diekill-Correct ECC for HBM Reliability Without Additional Dies

delete2026-06-15
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PRE
AI
Y
Yesin Ryu
B
Byungwoo Bang
J
Jaeho Shin
H
Hunseong Choi
Y
Yoojin Kim
H
Hanum Ko
J
Jungrae Kim
DOI:10.1109/tc.2026.3703497delete
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Abstract

Abstract

En 中文
As High Bandwidth Memory (HBM) continues scaling to address the demands of data-intensive workloads and AI-driven applications, ensuring resilience against increasingly frequent memory faults has become critical. DieCARE introduces a novel memory architecture co-designed with an innovative Error Correcting Code (ECC) scheme to enable die-level fault tolerance without requiring additional dies. It strategically distributes data and ECC check bits across multiple dies, leveraging advanced ECC techniques with flexible symbol layouts to optimize error correction capability, latency, and area efficiency. System-level evaluations demonstrate that DieCARE reduces memory Failure In Time (FIT) rate by $\mathbf{12,000}\boldsymbol{\times}$ , while maintaining an extremely low Silent Data Corruption (SDC) rate. These reliability improvements translate into increased system availability, yielding substantial benefits for large-scale computing systems.
Keywords:
Reliability
HBM
ECC
die-level fault tolerance

Journal

IEEE Transactions on Computers cover
IEEE Transactions on Computers
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3.8
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Samsung Electronics Co., Ltd.
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Samsung Advanced Institute of Technology
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sungkyunkwan university
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