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Dielectric relaxation and electrical transport in NiO-doped bismuth borate glasses for electromagnetic shielding applications
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DOI：10.1016/j.mseb.2026.119436.png)
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Abstract
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Bismuth borate glass samples with composition (70B2O3-(30-x)Bi2O3-xNiO), where x = 0, 0.5%, 1.0%, 1.5%, and 2.0%, were synthesized by the melt quenching method and investigated for their magnetic behavior, temperature-dependent dielectric properties and the electrical conduction mechanism. The dielectric measurements carried out in the frequency range of 1 Hz to 5 MHz, and a temperature range of 513 K to 613 K shows a significant decrease in dielectric constant from 95 for x = 0 to 35 for x = 2 sample, indicating structural modification in the glass network due to NiO doping. Nyquist plots of real (Z ') vs. imaginary (Z '') components of impedance exhibit depressed semicircular arcs whose radii decrease with NiO concentration and temperature, confirming enhanced electrical conductivity. The scaling behavior of the imaginary part of electric modulus (M '') for different compositions indicates that the relaxation processes are strongly composition-dependent. The dc conductivity and power exponent (s), obtained from fitting AC conductivity data using Jonscher's power law, provide insight into the conduction mechanisms of the glasses. The dc conductivity shows a significant increase from 3 & times; 10-12 (at 513 K) to 7 & times; 10-10 (ohm-m)-1 at 613 K, for x = 2 sample, confirming thermally activated conduction. All samples exhibit AC conduction via the Non-Overlapping Small Polaron Tunnelling (NSPT) model. Furthermore, Ni ions have been found to exhibit a dual role: at lower concentrations they act as charge-carrier facilitators, enhancing conductivity, while at higher concentrations they act as a network stabiliser.
Keywords:
Magnetic properties
Dielectric studies
Modulus formulation
AC conductivity
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