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Direct Heat-Free Synthesis of Graphene on Copper for High-Ampacity Interconnects
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DOI：10.1016/j.mtphys.2026.102116.png)
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Abstract
En 中文
The low-temperature synthesis of graphene is of great significance for its integration and application in integrated circuits or flexible devices. However, the challenge remains to directly grow few-layered graphene on the target substrate using off-the-shelf carbon sources without programmable heating. Here, we propose a strategy to use commercial graphite papers as the carbon source with plasma bombardment to produce activated carbon species, and few-layered graphene grows on Cu films/lines without additional heating. In contrast, conventional methane as the precursor does not yield graphene under the same conditions. Furthermore, this strategy is applied to Cu lines, and the electrical properties of graphene-skinned Cu lines are improved compared with annealed Cu lines: a 28.2% increase in breakdown current density and a 68.7% decrease in resistivity. The work provides a feasible strategy for graphene growth at low temperature, which would promote the integration and application of graphene in fields of temperature-sensitive fields.
Keywords:
Graphene synthesis
Low-temperature growth
Copper substrates
Plasma bombardment
Flexible electronics
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