.png){kind=icon}
.png){kind=icon}
Return
Directional electron filtering at a superconductor-semiconductor interface
.png){kind=icon}
OA
AI
DOI：10.1103/PhysRevB.103.165414.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
We evaluate the microscopically relevant parameters for electrical transport of hybrid superconductor-semiconductor interfaces. In contrast to the commonly used geometrically constricted metallic systems, we focus on materials with dissimilar electronic properties like low-carrier density semiconductors combined with superconductors, without imposing geometric confinement. We find an intrinsic mode-selectivity, a directional momentum-filter, due to the differences in electronic band structure, which creates a separation of electron reservoirs each at the opposite sides of the semiconductor, while at the same time selecting modes propagating almost perpendicular to the interface. The electronic separation coexists with a transport current dominated by Andreev reflection and low elastic backscattering, both dependent on the gate-controllable electronic properties of the semiconductor.
Keywords:
ENERGY-GAP STRUCTURE
RESISTANCE
TRANSITION
JUNCTIONS
TRANSPORT
FORMULA
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
3.7
Papers:
15.4W
Citations:
41.0W