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Dislocation generation in diamond under extreme loading
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DOI：10.1016/j.matt.2023.06.044.png)
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Abstract
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Diamond is, by virtue of its high bonding forces and Peierls-Nabarro barrier stresses, among the hardest materials on earth due to the difficulty of generating and moving dislocations. We demonstrate, using molecular dynamics and analytical calculations, that the generation of defects is dependent on loading orientation. Shock loading single-crystal diamond along [001] and [011] to a stress of 137 GPa did not reveal dislocations, whereas loading along [111] generated profuse dislocations. The introduction of a void at the latter orientation generated dislocations at 72.6 GPa. Two slip systems were identified: <011>{100} and <112>{111}. The threshold for plastic deformation in diamond is orientation dependent and significantly lower than reported in previous studies: 0.14 G (shear modulus). The void collapse generated localized amorphization for [001]. These results on the anisotropy of plasticity and void effects have relevance for the improvement of symmetry in the collapse of diamond capsules in inertial fusion experiments.
Keywords:
VOID GROWTH
DUCTILE
METALS
CARBON
INITIATION
SILICON
FAILURE
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