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Distributed feedback transistor laser
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DOI：10.1063/1.3453656.png)
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Abstract
En 中文
Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength lambda=959.75 nm and threshold current I(B)=13 mA operating at -70 degrees C. For devices with cleaved ends a sidemode suppression ratio >25 dB has been achieved. (C) 2010 American Institute of Physics. [doi:10.1063/1.3453656]
Keywords:
bipolar transistors
distributed feedback lasers
III-V semiconductors
indium compounds
nanolithography
semiconductor lasers
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W
