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Donor-based qubits for quantum computing in silicon
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DOI：10.1063/5.0060957.png)
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Abstract
En 中文
Spin-qubits based on impurities such as phosphorus in silicon (Si) have attractive attributes for the development of quantum computing devices. Very long coherence times can be achieved for donor-based qubits in Si due to the availability of isotopically pure Si-28 layers where the Si-29 atoms, which otherwise lead to decoherence, are largely absent in the active region of the device. Well-behaved single donor qubits in Si can routinely be formed using ion implantation, and the key performance criteria needed to demonstrate the basis of a viable platform for quantum computing have been achieved. The crucial next stage of development is to demonstrate suitable pathways for scale-up that allow patterned arrays of donor qubits to be controllably coupled and that are robust against the inherent donor placement tolerances and material processing constraints that exist. Here, we review progress on the fabrication and measurement of donor-based qubits in silicon via the ion implantation pathway and discuss the key developmental milestones that have been achieved. We also provide an overview of the key scale-up strategies that are being actively pursued to take donor-based quantum computing in Si to the next stage. Published under an exclusive license by AIP Publishing.
Keywords:
SINGLE-ION IMPLANTATION
ELECTRON-SPIN
READ-OUT
INFORMATION
DIFFUSION
DOPANT
CONTROLLABILITY
FABRICATION
STORAGE
Journal
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11.6
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