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δ-doping in diamond
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DOI：10.1016/S0008-6223(98)00272-3.png)
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Abstract
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delta-Boron-dopod homoepitaxial diamond films grown by microwave CVD were optimized for field effect transistor application to obtain steep profiles. The critical growth steps of the delta-doped device structures were analyzed and improved using mass spectrometry gas analysis, determining growth- and etch rates, hall-effect-measurements, elastic recoil detection and conductivity measurements. Optimized growth procedures were obtained and residual doping in the gate control layer was compensated using nitrogen. This results in a novel lossy dielectric Junction FET channel with high sheet charge activation and high drain current densities at moderate operation temperatures of 200 degrees C. (C) 1999 Elsevier Science Ltd. All rights reserved.
Keywords:
diamond
chemical vapor deposition
doping
mass spectrometry
electronic properties
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