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Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors
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DOI：10.1002/adma.201504307.png)
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Abstract
En 中文
Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b: 5,4-b'] dithiophen-2-yl)alt-[1,2,5] thiadiazolo-[3,4-c] pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.
Keywords:
HIGH-PERFORMANCE
HIGH-MOBILITY
SEMICONDUCTING POLYMERS
ORGANIC TRANSISTORS
FILM
ELECTRODES
MONOLAYERS
IODINE
LAYER
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26.8
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