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Doping optimization for optoelectronic devices
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DOI：10.1007/s11082-018-1393-4.png)
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Abstract
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We present a mathematical and numerical framework for the optimal design of doping profiles for optoelectronic devices using methods from mathematical optimization. With the goal to maximize light emission and reduce the threshold of an edge-emitting laser, we consider a drift-diffusion model for charge transport and include modal gain and total current into a cost functional, which we optimize in cross sections of the emitter. We present 1D and 2D results for exemplary setups that point out possible routes for device improvement.
Keywords:
Optoelectronics
Drift-diffusion model
Second-order optimization
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