.png){kind=icon}
.png){kind=icon}
Return
Dual-function isopropanol strategy for Hansen solubility parameter guided dispersion and surface hydroxylation in surfactant-free CeO2 Slurries for SiO2 chemical mechanical polishing
.png){kind=icon}
PRE
AI
H
L
L
W
L
Y
DOI：10.1016/j.surfin.2026.109424.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In integrated circuit manufacturing, achieving high-quality planarization of dielectric films through chemical mechanical polishing (CMP) is crucial for downstream process fidelity and overall device performance. CeO2 is a highly effective abrasive for dielectric CMP, but its dispersion typically relies on surfactants that can reduce the material removal rate. Here, we present a surfactant-free approach that uses Hansen solubility parameters and a water-isopropanol (IPA) co-solvent to simultaneously improve CeO2 dispersibility and surface hydroxylation, strengthening chemo-mechanical interactions with SiO2. At an optimal IPA concentration (20 vol%), the slurry achieves a 1.86-fold increase in SiO2 material removal rate to 483 nm/min compared to a water-only formulation, while maintaining an ultralow root-mean-square roughness (Rq) of 0.151 nm. This work outlines a broadly applicable method to optimize abrasive dispersion and interfacial reactivity without surfactants, enabling rational tuning of dielectric-CMP slurry performance.
Keywords:
Chemical mechanical polishing
Surfactant-free
Surface hydroxylation
Cerium oxide
Dielectric materials
Journal
IF:
6.3
Papers:
8.8K
Citations:
2.4W
Organization
Cited Papers