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Dynamic atomic-scale electron avalanche breakdown in solid dielectrics
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DOI：10.1038/s41467-025-61866-z.png)
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Abstract
En 中文
Electron avalanche breakdown plays a pivotal role in determining the efficiency and reliability of semiconductors and insulators in micro-nanoelectronics and power systems. However, it still remains challenging to understand and control this transient non-equilibrium process. Here, we propose and demonstrate an atomic-scale electron avalanche breakdown model to investigate the dynamic behaviors of excited electrons under extremely high electric fields in various dielectrics ranging from simple oxides to perovskites. Using high-throughput calculations, we establish the relationship maps between ionization energy, bond energy, electron mean free path and breakdown strength, and then excavate their mathematical expressions. On this basis, a high-entropy strategy in BaTiO3-based dielectrics with controllable lattice distortion is well designed to regulate the electron avalanche process, which successfully achieves a ~ 250% improvement in the breakdown strength by preventing electrons from acquiring sufficient energy. The atomic-scale understanding of electron avalanche breakdown process provides more refined guidance for atom/defect engineering to break the universal rule of inverse relation between breakdown strength and permittivity in dielectrics. Here the authors propose an atomic-scale electron avalanche breakdown model to investigate the dynamic behaviors of excited electrons under extremely high electric fields in various dielectrics ranging from simple oxides to perovskites.
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