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Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes
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DOI：10.1186/s11671-019-2984-0.png)
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Abstract
En 中文
In this work, flip-chip AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with various meshed contact structures are systematically investigated via three-dimensional finite-difference time-domain (3D FDTD) method. It is observed that both transverse electric (TE)- and transverse magnetic (TM)-polarized light extraction efficiencies (LEEs) are sensitive to the spacing and inclined angle for the meshed structure. We also find that the LEE will not be increased when a large filling factor is adopted for the meshed structures, which is because of the competition among the p-GaN layer absorption, the Al metal plasmon resonant absorption, and the scattering effect by meshed structures. The very strong scattering effect occurring in the hybrid p-GaN nanorod/p-AlGaN truncated nanocone contacts can enormously enhance the LEE for both TE- and TM-polarized light, e.g., when the inclined angle is 30 degrees, the LEE for the TE- and TM-polarized light can be increased by similar to 5 times and similar to 24 times at the emission wavelength of 280nm, respectively.
Keywords:
Ultraviolet light-emitting diode
Light extraction efficiency
AlGaN
Finite-difference time-domain method
p-type contact
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