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Efficient and Robust Flexible Silver-Nanowire Electrode-Based Quantum Dot Light-Emitting Diode
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DOI：10.1021/acs.nanolett.5c05526.png)
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Abstract
En 中文
Flexible quantum-dot light-emitting diodes (QLEDs) based on silver-nanowires (AgNWs) transparent electrodes show great potential but suffer from surface roughness, poor wettability, and unstable interfaces. We propose a multifunctional interfacial engineering strategy using ZnMgO nanocrystals to address these issues. The ZnMgO layer acts as a nanoscale welding agent, preventing AgNWs sliding and improving mechanical stability while providing a smooth surface for uniform organic hole transport layer (HTL) deposition. As confirmed by capacitance–voltage (C–V) and single-carrier measurements, band alignment at the HTL/ZnMgO interface creates a low-barrier hole injection pathway, optimizing the charge balance. The resulting flexible QLED achieves 20.84% external quantum efficiency (EQE), 43,270 cd/m2 luminance, and excellent voltage tolerance, with brightness stable up to 10.8 V. The device retains over 80% performance after 2000 bending cycles. Moreover, this strategy achieves up to 27.52% EQE for flexible QLEDs based on conventional electrodes, indicating a scalable route for optoelectronics.
Journal
IF:
9.1
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2.7W
Citations:
16.5W