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Electric field and grain size dependence of Meyer-Neldel energy in C60 films
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DOI：10.1016/j.synthmet.2011.07.008.png)
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Abstract
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Meyer-Neldel rule for charge carrier mobility measured in C-60-based organic field-effect transistors (OFETs) at different applied source drain voltages and at different morphologies of semiconducting fullerene films was systematically studied. A decrease in the Meyer-Neldel energy E-MN from 36 meV to 32 meV was observed with changing electric field in the channel. Concomitantly a decrease from 34 meV to 21 meV was observed too by increasing the grain size and the crystallinity of the active C-60 layer in the device. These empiric findings are in agreement with the hopping-transport model for the temperature dependent charge carrier mobility in organic semiconductors with a Gaussian density of states (DOS). Experimental results along with theoretical descriptions are presented. (C) 2011 Elsevier B.V. All rights reserved.
Keywords:
Organic field effect transistors
Charge carrier mobility
Meyer-Neldel rule
Charge transport
Film morphology
Grain size
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