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Electric-field engineering and SISSO prediction of Schottky barrier heights
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DOI：10.1016/j.commatsci.2026.114743.png)
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Abstract
En 中文
• Electric field effectively modulates Schottky barrier height in C-MX2. • A symbolic regression (SISSO) approach identifies a key SBH descriptor. • The descriptor integrates electric field, lattice constant, and atomic radius. • The model exhibits high accuracy and transferability to telluride systems. • Fermi-level pinning factor confirms the tunability of graphene work function.
Keywords:
Schottky barrier height
electric field
SISSO
Fermi-level pinning
graphene work function
Journal
IF:
3.3
Papers:
1.3W
Citations:
3.6W
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Cited Papers