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Electrically Pumped GeSn Micro-Ring Lasers
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DOI：10.1109/JSTQE.2024.3489712.png)
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Abstract
En 中文
Recent progress in the quest for CMOS-integrable GeSn light sources comprises the optically-pumped laser operating at room temperature and the first demonstrations of electrically pumped lasers. In this work, the performance of electrically-pumped double heterostructure GeSn ring laser diodes are evaluated as a function of their geometry and pumping pulse time. In particular, the trade-off between the band structure, i.e., the directness of the GeSn band gap, and the device heat dissipation is discussed in terms of their impact on the emission intensity and threshold current density.
Keywords:
Semiconductor lasers
Pump lasers
Strain
Silicon
Diode lasers
Germanium
Current density
Temperature measurement
Photonic band gap
Light emitting diodes
Electrical pumped lasers
GeSn
si photonics
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Citations:
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