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Electrochemically engineered NiOx for high-performance quantum dot light-emitting diodes
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DOI：10.1016/j.jcis.2025.139079.png)
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Abstract
En 中文
• Integration of electrochemical treatment into optoelectronic devices. • Precise tuning of the NiOx HIL’ s work function via Ni3+/Ni2+ ratio regulation. • Optimal balance: work function enhancement vs. conductivity reduction. • Maximizing hole injection efficiency and boosting radiative recombination. • ∼80 % enhancement in current efficiency and 4-flod improvement in lifetime.
Journal
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9.7
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3.7W
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14.7W