.png){kind=icon}
Return
Electromigration threshold in copper interconnects
.png){kind=icon}
PRE
AI
DOI：10.1063/1.1371251.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295-400 degreesC. Based on the Blech electromigration model [I. A. Blech, J. Appl. Phys. 47, 1203 (1976)], a simplified equation is proposed to analyze the experimental data from various combinations of current density and interconnect length, as well as to estimate the electromigration threshold product of current density and line length, (jL)(th), at a certain temperature. The resulting (jL)(th) value appears to be temperature dependent, decreasing with increasing temperature in the tested range between 295 and 400 degreesC. (C) 2001 American Institute of Physics.
Keywords:
ALUMINUM FILMS
THIN-FILMS
STRESS
CU
KINETICS
AL(CU)
DRIFT
LINES
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W
Organization
No organization information available
Cited Papers
ShareSave
ShareSave
A high-performance broadband terahertz absorber based on single layer cross-shaped graphene.png)
Optik
OptikIF0
PREAI
ShareSave
View more