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Electronic contribution to friction on GaAs: An atomic force microscope study
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DOI：10.1103/PhysRevB.77.184105.png)
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Abstract
En 中文
The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50 nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.
Keywords:
SURFACE
CALIBRATION
OXIDATION
PRESSURE
ADHESION
CONTACT
MOTION
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