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Electrostatically enhanced interfacial thermal conductance in remote epitaxy
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DOI：10.1016/j.actamat.2026.122246.png)
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Abstract
En 中文
Remote epitaxy enables high-quality epitaxial growth across large lattice and thermal expansion mismatches by leveraging the electrostatic potential of polar substrates in conjunction with two-dimensional (2D) interlayers. A clear understanding of interfacial thermal transport in such systems is essential to evaluate its potential for heterogeneous integration. To date, however, the interfacial thermal conductance (ITC) of remote epitaxy interfaces has not been experimentally determined, and the mechanisms by which 2D interlayers and electrostatic interactions affect phonon transport remain poorly understood. Here, AlN was heterogeneously integrated onto a graphene-coated SiC substrate via remote epitaxy. Nonequilibrium molecular dynamics (NEMD) simulations were combined with time-domain thermoreflectance (TDTR) measurements to elucidate how electrostatic interactions regulate phonon transmission and to establish structure-property relationships governing interfacial thermal transport in remote epitaxy. The results reveal that, despite the presence of a 2D interlayer, the ITC remains high (similar to 136 MW & centerdot;m(-2)& centerdot;K-1), which is attributed to improved crystalline quality near the interface and enhanced interfacial binding energy induced by electrostatic interactions. This work provides critical insights into the interfacial thermal transport mechanisms of remote epitaxy and highlights the pivotal role of electrostatic interactions in enabling efficient heat transfer across heterogeneous interfaces.
Keywords:
Heterogeneous integration
Remote epitaxy
Interfacial thermal conductance
Time-domain thermoreflectance
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9.3
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2.0W
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12.9W
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