Emission enhancement of Er3+-doped oxide- and oxyfluoro-tellurite glass thin films on silicon for photonic integrated chips: The effect of thermal annealing in oxygen atmosphere

J. Chacaliaza-Ricaldi

doi:10.1016/j.materresbull.2026.114343

Emission enhancement of Er3+-doped oxide- and oxyfluoro-tellurite glass thin films on silicon for photonic integrated chips: The effect of thermal annealing in oxygen atmosphere

2026-07-30

0

PRE

AI

J

J. Chacaliaza-Ricaldi *

J

J. Gonzalo

F

F. Cabello

M

M. de Oliveira

G

G. Lozano C.

I

I.A.C. Magarotto

D

Danilo Manzani

E

E. Marega

V

V.A.G. Rivera *

DOI：10.1016/j.materresbull.2026.114343

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Abstract

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• Er3+-doped tellurite glass thin films were fabricated on silicon by PLD. • Oxygen annealing at 315 °C strongly enhances Er3+ photoluminescence. • Optimum visible and 1.53 µm emission is achieved after 6 h annealing. • Oxyfluoro-tellurite films show stronger and more stable emissions.

Keywords:

Rare-earths ions

Oxide glasses

Oxyfluoride glasses

Thin films

Pulsed laser deposition

Emission enhancement of Er3+-doped oxide- and oxyfluoro-tellurite glass thin films on silicon for photonic integrated chips: The effect of thermal annealing in oxygen atmosphere

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