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End-to-end edge detection on self-rectifying resistive memory array

delete2024-01-01
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AI
潘树荣 cover
潘树荣 (Shurong Pan)
刘文涵 (Wenhan Liu)
王浩 (Hao Wang)
Q
Qijun Huang
贺金生 (Jin He)
R
Ruiqing Cheng
常胜 (Sheng Chang) *
DOI:10.1039/d4tc03155edelete
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Abstract

Abstract

En 中文
In recent years, memristor that can integrate storage and computing has gained some attention in image processing. In this study, edge detection for noisy images is realized in a single-step manner by a new Gauss-Laplace operator in a circuit with a memristor array. It ensures the edge detection end-to-end and reduces hardware buffer consumption compared to the traditional two-step methods. Conductance values from our experimentally fabricated Cu2Te memory device are used in the circuit design, which mitigates the gap between theory and real-world device arrays. Furthermore, an interesting finding is that the edge detection results in the circuit are closer to the ideal ones after reducing the grayscale from 256 to 16, which means fewer input voltage levels and a simpler input circuit are possible. It is hoped this work can help design memristor array circuits for image processing. We fabricate the Cu2Te memristor with self-rectifying characteristics, and explore its application in edge detection, which is realized in a single step manner by a new Gauss-Laplace operator in a circuit with the memristor array.

Journal

Journal of Materials Chemistry C cover
Journal of Materials Chemistry C
IF:
5.1
Papers:
2.0W
Citations:
8.0W

Organization

E
East China Jiaotong University
Scholars:
4.1K
Papers: 2.9K
Citations: 2.9K
W
wuhan university
Scholars:
8.1W
Papers: 5.8W
Citations: 70