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Energy-Efficient Data-Aware SRAM Design Utilizing Column-Based Data Encoding
DOI:10.1109/TCSII.2019.2958668.png)
Abstract
En 中文
This brief presents an ultra-low power SRAM utilizing a column-based data encoding scheme for power reduction. The proposed scheme is particularly beneficial in applications like bio-signal and image processing where neighboring data have similar values. The proposed technique generates write data through bit-wise comparison, which leads to a larger number of 0s. To utilize this, a data-aware bitline pre-charge scheme is proposed to minimize the write power for 0. In addition, a PVT-tracking bias generator compensates for the read bitline leakage to improve the sensing margin. A 32Kb SRAM in 65nm CMOS technology shows successful operation down to 0.36 V with the power of 0.37 mu W and the maximum frequency of 0.25 MHz. The minimum energy is 0.3 pJ/access at 0.5 V.
Keywords:
Encoding
Sensors
Decoding
Low-power electronics
SRAM cells
Image coding
SRAM
data-aware
ultra-low power
bitline leakage
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