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Engineering Exciton g-Factors With Light in Type-II Heterostructures
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DOI：10.1002/adom.71533.png)
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Abstract
En 中文
Tunability of Landé g-factors associated with a single-type of carrier in semiconductors remains a critical challenge, as precise control over spin physics is essential for advancing spintronic applications. At the same time, developing fast, field-free tuning mechanisms is highly desirable. Here, we demonstrate that type-II heterostructures provide an effective and scalable platform for robust optical manipulation of the g-factor using only the intensity of the incident light. By engineering wavefunction localization and overlap through the Coulomb attraction between spatially separated carriers, we have achieved a 1.5-fold change in the excitonic g-factor solely by adjusting light intensity. Band structure simulations incorporating densities of photoexcited carriers confirm that this tuning mechanism arises from the delocalized carrier in the type-II configuration. This approach enables a route for highly localized optical spin control, bridging a gap between spintronics and photonics. By eliminating the need for complex external fields, our findings open new avenues for g-factor engineering in well-established semiconductor platforms.
Keywords:
band bending
excitons
g-factor
heterostructures
light
magneto-optics
type-II
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