.png){kind=icon}
.png){kind=icon}
Return
Enhanced Detectivity of Ge0.854Sn0.146 Mid-Infrared Photodiodes by Layer Transfer
.png){kind=icon}
PRE
AI
C
N
L
E
J
A
M
V
J
N
P
S
O
G
J
O
A
V
DOI：10.1021/acsphotonics.5c02368.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Efficient and cost-effective mid-infrared photodetectors that operate at room temperature are essential for a wide range of applications, including environmental monitoring, medical diagnostics, surveillance, and target recognition. A cost-efficient solution to implement such photodetectors is to use GeSn alloys, as they can be grown directly onto 200 and 300 mm germanium-buffered silicon wafers. However, the large lattice mismatch associated with the epitaxial growth of GeSn on Ge compromises the growth of thick, high-quality active layers, thus, limiting the responsivity of GeSn-based photodetectors. Herein, we demonstrate the integration of Ge0.854Sn0.146 heterostructures onto metal layers, yielding a 3-fold enhancement in the room-temperature photodetector responsivity at 2.5 μm, with a cutoff wavelength of 3.1 μm. Transfer on metal does not degrade the optoelectronic properties of absorbing layers. A 3.5-fold enhancement of the room temperature specific detectivity (D* = 6.5 × 108 cm·Hz1/2·W–1) is measured at 2.5 μm relative to that of conventional as-grown control photodetector. This approach enhances the performance of GeSn photodetectors at specific wavelengths for a given thickness of the transferred stack, overcoming the limitations of thin absorbing GeSn layers.
Keywords:
Electrical conductivity
Infrared light
Layers
Quantum mechanics
Sensors
germanium−tin
midinfrared
photodetectors
photodiodes
group-IV materials
Journal
IF:
6.7
Papers:
5.6K
Citations:
2.5W
Organization
Cited Papers