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Enhanced Orbital Torque Efficiency and Magnetization Switching Through M (M = MgO, Gd, and Pt) Doping Ti Orbital Hall Channel for Efficient Orbitronic Devices
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DOI：10.1002/adfm.202505410.png)
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Abstract
En 中文
The orbital Hall effect in materials with weakly spin-orbit coupling has attracted considerable interest for orbitronic applications due to its high efficiency, low cost, and environmental friendliness. Here, the enhanced orbital torque efficiency and magnetization switching of the Ti1-XMX (M = MgO, Gd, and Pt)/[Co/Pt]4 structures are systematically investigated. The absolute value of the orbital torque efficiencies is significantly improved up to ≈0.23, ≈0.20, and ≈0.27 with MgO, Gd, and Pt dopants, respectively, compared to the Ti/[Co/Pt]4 matrix structure (≈0.06). Furthermore, the high orbital torque efficiencies lower the critical switching current density of 1.9 × 107 A cm−2 for Ti/[Co/Pt]4 to 3.6 × 106, 4.0 × 106, and 7.8 × 106 A cm−2 for Ti1-XMgOX/[Co/Pt]4, Ti1-XGdX/[Co/Pt]4, and Ti1-XPtX/[Co/Pt]4 structures, respectively. The enhancement of orbital torque efficiency of Ti1-XMgOX/[Co/Pt]4 heterostructures mainly originates from the improvement of the resistivity of Ti1-XMgOX, and for Ti1-XGdX/[Co/Pt]4 and Ti1-XPtX/[Co/Pt]4 heterostructures, it can be dominantly attributed to the improvements of orbital Hall conductivity of Ti1-XGdX and Ti1-XPtX, verified through the first-principles calculations. Our findings offer a promising approach for developing energy-efficient orbitronic devices.
Keywords:
memory and logic devices
orbitronics
orbital Hall effect
spintronics
Journal
IF:
19
Papers:
3.4W
Citations:
32.1W
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