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Enhancing Field-Like Efficiency Via Interface Engineering with Sub-Atomic Layer Ta Insertion
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DOI：10.1002/advs.202412409.png)
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Abstract
En 中文
The prevailing research emphasis has been on reducing the critical switching current density (Jc) by enhancing the damping-like efficiency (beta DL). However, recent studies have shown that the field-like efficiency (beta FL) can also play a major role in reducing Jc. In this study, the central inversion asymmetry of Pt-Co is significantly enhanced through interface engineering at the sub-atomic layer of Ta, thereby inducing substantial alterations in the beta FL associated with the interface. The beta FL has shown a 123% increase, from -1.66 Oe/(MA cm-2) to -3.8 Oe/(MA cm-2). As a result, the multilayered Ta/Pt/Ta (0.3 nm insertion)/Co/Ta structure leads to a notable decrease in Jc, exceeding a remarkable 90% compared to the simpler Ta/Pt/Co/Ta structure, ultimately achieving a significantly low value of 2.7 MA cm-2. These findings pave the way for the development of highly efficient and energy-saving spin-orbit torque (SOT)-based spintronic devices, where further optimizations in interface engineering can unlock even greater potential in terms of reduced power consumption and enhanced performance.
Keywords:
field-like efficiency
interface engineering
interfacial rashba effect
perpendicular magnetic anisotropy
spin-orbit torque
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