ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 μW

doi:10.1364/OL.388870

ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 μW

2020-05-13

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DOI：10.1364/OL.388870

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Superlattice structures of In(Al)GaAs with localized ErAs trap centers feature excellent material properties for terahertz (THz) generation and detection. The carrier lifetime of these materials as emitter and receiver has been measured as 1.76 ps and 0.39 ps, respectively. Packaged photoconductors driven by a 1550 nm, 90 fs commercial Toptica TeraFlash pro system feature a 4.5 THz single shot bandwidth with more than 60 dB dynamic range. The emitted THz power of the ErAs:In(Al)GaAs emitter versus laser power has been recorded with a pyroelectric detector calibrated by the Physikalisch Technische Bundesanstalt (PTB). The maximum power was 164 mu W at a laser power of 42 mW and a bias of 200V. (C) 2020 Optical Society of America

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ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 μW

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