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Ferroelectric In0.3Ga0.7As/GaAs JL-FET Based-Biosensor with Dual-material Gate Technique: Optimizing ON-State Sensitivity for Breast Cancer Cell Types Detection
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DOI：10.1007/s11220-026-00755-1.png)
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Abstract
En 中文
This study explores the potential of a dielectrically modulated ferroelectric-based dual-material gate junctionless In0.3Ga0.7As/GaAs FET (DM-Ferro-DMG-JLFET) as a biosensor for detecting breast cancer biomarkers, including MDA-MB-231, Hs578T, T47D, and MCF-7, as well as the normal cell line MCF-10 A. Incorporating a SiO2:Ferro thin layer at the control gate enhances ON-state sensitivity by exploiting variations in the dielectric constant of different biomarkers. Compared to reference structures, the proposed device achieves ON-state current sensitivity up to 48.52% and selectivity up to 45.05% for T47D. The Pearson correlation coefficient of 0.996 confirms strong linearity. Simulations under varying biomolecular charge densities show over 7.9% current reduction for T47D cells, outperforming air-filled cavities. Additionally, analog/RF figures of merit such as transconductance gain, GBW, and TFP show significant improvements. The results highlight the DM-Ferro-DMG-JLFET's superior sensitivity and its promise for future breast cancer biosensing applications in both research and clinical diagnostics.
Keywords:
JL-FET biosensor
Ferroelectric
Dual material gate
Dielectric modulation technique
Breast cancer
Biomolecules
Sensitivity
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