.png){kind=icon}
Return
Ferroelectrically Switchable Half-Quantized Hall Effect
.png){kind=icon}
PRE
AI
DOI：10.1021/acs.nanolett.5c00550.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Integrating ferroelectricity, antiferromagnetism, and topological quantum transport within a single material is rare but crucial for developing next-generation quantum devices. Here, we propose a multiferroic heterostructure consisting of an antiferromagnetic MnBi2Te4 bilayer and an Sb2Te3 film is able to harbor the half-quantized Hall (HQH) effect with a ferroelectrically switchable Hall conductivity of +/- e 2/2h. We first show that, in the energetically stable configuration, the antiferromagnetic MnBi2Te4 bilayer opens a gap in the top surface bands of Sb2Te3 through the proximity effect, while its bottom surface bands remain gapless; consequently, an HQH conductivity of e 2/2h can be sustained clockwise or counterclockwise, depending on the antiferromagnetic configuration of the MnBi2Te4. Remarkably, when interlayer sliding is applied within the MnBi2Te4 bilayer, its electric polarization direction associated with parity-time reversal symmetry breaking is reversed, accompanied by a reversal of the HQH conductivity. The proposed approach offers a powerful route to control topological quantum transport in antiferromagnetic materials by ferroelectricity.
Keywords:
half-quantized Hall effect
anomalous Hall effect
antiferromagnetism
ferroelectricity
magnetoelectriceffect
quantum transport
Journal
IF:
9.1
Papers:
2.7W
Citations:
16.5W
Organization
Cited Papers
ShareSaveShareSaveHalf-Magnetic Topological Insulator with Magnetization-Induced Dirac Gap at a Selected Surface.png)
PHYSICAL REVIEW X
OAAI
PHYSICAL REVIEW XIF15.7
OAAIShareSavePrediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materialsNATURE COMMUNICATIONSOAAI
NATURE COMMUNICATIONSIF15.7
OAAIShareSaveShareSave
View more