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Field-Effect Transistors Built from All Two-Dimensional Material Components
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DOI：10.1021/nn501723y.png)
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Abstract
En 中文
We demonstrate field-effect transistors using heterogeneously stacked two-dimensional materials for all of the components, including the semiconductor, insulator, and metal layers. Specifically, MoS2 is used as the active channel material, hexagonal-BN as the top-gate dielectric, and graphene as the source/drain and the top-gate contacts. This transistor exhibits n-type behavior with an ON/OFF current ratio of >10(6), and an electron mobility of similar to 33 cm(2)/V.s. Uniquely, the mobility does not degrade at high gate voltages, presenting an important advantage over conventional Si transistors where enhanced surface roughness scattering severely reduces carrier mobilities at high gate-fields. A WSe2-MoS2 diode with graphene contacts is also demonstrated. The diode exhibits excellent rectification behavior and a low reverse bias current, suggesting high quality interfaces between the stacked layers. In this work, all interfaces are based on van der Waals bonding, presenting a unique device architecture where crystalline, layered materials with atomically uniform thicknesses are stacked on demand, without the lattice parameter constraints. The results demonstrate the promise of using an all-layered material system for future electronic applications.
Keywords:
layered materials
transition metal dichalcogenides
graphene
hexagonal boron nitride
MoS2
heterolayers
