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Flexible monolithic 3D complementary circuits based on 2D semiconductor inks
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DOI：10.1038/s41467-025-66419-y.png)
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Abstract
En 中文
Emerging flexible and wearable electronic systems require high-density, low-power circuits that can seamlessly integrate with soft substrates. Monolithic 3D (M3D) integration using 2D semiconductors offers a compelling route in fulfilling these requirements by enabling vertical stacking without compromising mechanical compliance. However, current M3D approaches utilizing 2D semiconductors often require high-temperature processing or transfer steps that hinder their scalability on flexible substrates. Herein, we present a low-temperature M3D integration strategy based on 2D semiconductor inks, which is enabled by a tailored anion-cation doping approach for precise carrier control in n- and p-type devices. Our methodology yields vertically assembled complementary metal-oxide-semiconductor circuits – including inverters, logic, and photosensor-integrated gates, and ring oscillators (ROs) – fabricated entirely at ≤150 °C. Notably, the inverters exhibit a voltage gain up to 462 at a supply voltage of 4 V, and the 5-stage ROs can operate at a maximum oscillation frequency of 13.5 kHz. Beyond their electrical performances, the circuits display robust mechanical stabilities, conforming to curved surfaces, and excellent skin compatibilities. This study reports a scalable, low-temperature platform for the fabrication of M3D electronics in wearable low-power neuromorphic computing systems and bio-integrated electronics. 2D semiconductors hold promise for the fabrication of high-density flexible integrated circuits, but they often require high-temperature processing or transfer steps. Here, the authors report the low-temperature ( ≤ 150 °C) fabrication of wafer-scale 3Dintegrated flexible complementary circuits based on 2D semiconductor inks.
Keywords:
2D semiconductors
monolithic 3D integration
flexible electronics
semiconductor inks
complementary circuits
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