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Formation of carbon homonuclear bonds in β-SiC under neutron irradiation at various temperatures and neutron doses
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DOI：10.1016/j.actamat.2026.122252.png)
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Abstract
En 中文
To elucidate radiation defect processes in SiC, Raman spectroscopy was systematically applied to high-purity, polycrystalline beta-SiC that was neutron irradiated at a range of temperature and dose conditions. The analysis specifically focused on formation of carbon homonuclear bonds by irradiation; these bonds were indicated by D and G bands and amorphous carbon peaks. Intensity of the carbon peaks relative to SiC peaks significantly decreased in the case of high temperature and/or high neutron dose of 500 degrees C to 29 displacements per atom (dpa) and about 800 degrees C to 1.38 and 29 dpa. The absence of carbon bond peaks under those conditions was explained by growth of stoichiometric defect clusters, consistent with previous atomistic simulations on SiC defect stability. The lack of Raman bands associated with carbon clusters under high-temperature and high-dose radiation conditions accounts for the resistance of SiC to phase separation under irradiation. The findings further suggest that material compositions and chemical properties that are inherently resistant to chemical disordering under high-dose radiation conditions are indicative of the long-term durability of ceramic compounds in radiation environments.
Keywords:
SIC
Radiation defects
Neutron irradiation
Raman spectroscopy
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9.3
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2.0W
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12.9W
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