Future interconnect materials for highly integrated semiconductor devices

doi:10.1038/s44287-025-00233-y

Future interconnect materials for highly integrated semiconductor devices

2025-11-01

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DOI：10.1038/s44287-025-00233-y

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As semiconductor-based electronic technologies continue downscaling, there is an urgent need to overcome the limitations of interconnect architectures and materials that are driving an unsustainable increase in energy consumption and jeopardizing performance. In this Review, we investigate the primary causes of prolonged signal delays in interconnect systems, providing an overview of the development of key interconnect components: metals, diffusion barriers and intermetal dielectrics. We define the essential requirements and technological hurdles for next-generation materials to be industrialized within damascene processes, including topological semi-metals such as molybdenum phosphide (MoP) and 2D materials such as graphene and amorphous boron nitride (a-BN). Integrating new materials into advanced device systems offers opportunities for the advancement of interconnect technologies and highly integrated semiconductor devices.

Keywords:

DIELECTRIC-CONSTANT MATERIALS

MECHANICAL-PROPERTIES

GRAPHENE

RESISTIVITY

CAPACITANCE

DESIGN

IMPACT

RISE

Future interconnect materials for highly integrated semiconductor devices

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