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Gamma irradiation-induced modulation of optical and structural properties in PVA/TiO2-ZrO2 nanocomposite films for optoelectronic applications
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DOI：10.1007/s00289-026-06579-z.png)
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Abstract
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The dip casting method was used to prepare PVA/TiO2, PVA/ZrO2 and PVA/ Ti50-Zr50 thin films with different concentrations of both TiO2 and ZrO2 (0.02, 0.04, 0.06, 0.08, 0.1 g). X-Ray diffractometer (XRD) was used to confirm the amorphous nature of PVA/Ti50-Zr50 and pure PVA thin films and a crystalline nature of PVA/TiO2 and PVA/ZrO2 thin films with different metal oxide content. SEM analysis was used to examine the surface morphology of the samples. Fourier transformation infrared spectrophotometer (FTIR) technique was used to study the molecular structure of all thin films in the ranges (500–4000 cm− 1). The optical parameters such as absorption coefficient (α), extinction coefficient (K), optical conductivity (σopt), refractive index (n) and optical energy gap (Eg) were measured by ultraviolet-visible spectrometer (UV) for all thin films. The optical parameters suggest that doping of TiO2, ZrO2 and Ti50−Zr50 on PVA matrix make the thin films viable option for use in photocatalysts, optoelectronics, and UV- blocking materials. The lowest band gap is 2.62eV for PVA/Ti50−Zr50 demonstrates that increases optical transitions and defect states. The band gap for PVA/ Ti50-Zr50 film is the lowest, indicating that it can be candidate for solar cell application. The PVA/Ti50-Zr50 thin film irradiated by gamma irradiation at different doses: D1=10 kGy, D2=20 kGy and D3=30 kGy show decrease in absorbance due to the increase of amorphous nature by irradiation.
Keywords:
Dip casting method
PVA
Ti50-Zr50
Absorption coefficient
Gamma irradiation
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