.png){kind=icon}
Return
Generalized Einstein relation for disordered semiconductors - Implications for device performance
.png){kind=icon}
OA
AI
DOI：10.1063/1.1461419.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasiequilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel width in field-effect transistors is discussed. (C) 2002 American Institute of Physics.
Keywords:
TRANSIENT ELECTROLUMINESCENCE
TRANSPORT
RELAXATION
DRIFT
Journal
IF:
3.6
Papers:
10.4W
Citations:
17.8W
Organization
No organization information available
Cited Papers
ShareSave
ShareSaveShareSaveSynthesis and crystal structures of mononuclear CuII/CoII coordination complexes from pyrazole-dicarboxylate acid derivatives.png)
Polyhedron
PolyhedronIF0
PREAI
ShareSave
View more