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Generalized quantization condition for topological insulators
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DOI：10.1103/PhysRevB.83.205109.png)
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Abstract
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The topological magnetoelectric effect (TME) is the fundamental quantization effect for topological insulators in units of the fine structure constant, alpha. In a recent study [Phys. Rev. Lett. 105, 166803 (2010)], a topological quantization condition of the TME was given under orthogonal incidence of the optical beam, in which the wavelength of the light or the thickness of the topological insulator film must be tuned to some commensurate values. This fine tuning is difficult to realize experimentally. In this article, we give manifestly SL(2, Z) covariant expressions for Kerr and Faraday angles at oblique incidence in a topological insulator thick film. We obtain a generalized quantization condition independent of material details, and propose a more easily realizable optical experiment, in which only the incidence angle is tuned to directly measure the topological quantization associated with the TME.
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3.7
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