arrow
Return

Global control and fast solid-state donor electron spin quantum computing

delete2005-07-22
delete82
delete
OA
AI
C
Charles D. Hill *
L
Lloyd C. L. Hollenberg
A
Austin G. Fowler
W
Wellard, CJ
A
Andrew D. Greentree
H
Hsi‐Sheng Goan
DOI:10.1103/PhysRevB.72.045350delete
deleteOriginal
deleteShare
deleteSave
View PDF
Abstract

Abstract

En 中文
We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naive implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100-1000 times that of the nuclear spin quantum computer with the ratio T-2/T-ops approaching the 10(6) level.
Keywords:
NUCLEAR-MAGNETIC-RESONANCE
SILICON
COMPUTATION
AI Summary

AI Summary

Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.

Journal

Physical Review B cover
Physical Review B
IF:
3.7
Papers:
15.4W
Citations:
41.0W

Organization

No organization information available
Cited Papers

Cited Papers

Electrical readout of a spin qubit without double occupancy
err2005-03-23
err23
errOAAI
errGreentree, AD; Hamilton, AR; Hollenberg, LCL; Clark, RG
errShare
errSave
Tuberculous epididymitis with extensive retroperitoneal and mediastinal involvement
err2004-07-01
err0
PREAI
errFelix T Oben; Renee D.E Wright; Chiledum A Ahaghotu
errShare
errSave
Single-spin readout for buried dopant semiconductor qubits
err2004-06-03
err11
errOAAI
errHollenberg, LCL; Wellard, CJ; Pakes, CI; Fowler, AG
errShare
errSave
Charge-based quantum computing using single donors in semiconductors
err2004-03-11
err310
errOAAI
errHollenberg, LCL; Dzurak, AS; Wellard, C; Hamilton, AR; Reilly, DJ; Milburn, GJ; Clark, RG
errShare
errSave
Electron spin relaxation times of phosphorus donors in silicon
err2003-11-20
err398
errOAAI
errTyryshkin, AM; Lyon, SA; Astashkin, AV; Raitsimring, AM
errShare
errSave
err
IF0
err
err0
PREAI
err
errShare
errSave
researcher View more