.png){kind=icon}
.png){kind=icon}
Return
Graphene oxide for nonvolatile memory application by using electrophoretic technique
.png){kind=icon}
PRE
AI
DOI：10.1016/j.mtcomm.2020.101537.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
The experimental work presented here, for the first time using electrophoretic technique to fabricate graphene oxide (GO)-based resistive random access memory (RRAM). By using electrophoretic technique, nonvolatile RRAM devices with Aluminum (Al)/GO/Indium tin oxide (ITO) cross-bar sandwich-like structure were fabricated. The fabricated devices show typical bipolar resistant switching behavior with ON/OFF ratio more than 10, retention time more than 102 s, and transition voltage less than 1.7 V. The switching mechanism for the devices is ascribed to the formation and rupture of the conducting filament induced by the diffusion of oxygen ions. The results show that the electrophoretic technique holds great potential for film manufacturing for RRAM.
Keywords:
Graphene oxide
Electrophoretic
RRAM
Bipolar
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
4.5
Papers:
1.5W
Citations:
3.7W