Return
Graphene spintronics
DOI:10.1038/NNANO.2014.214.png)
Abstract
En 中文
The isolation of graphene has triggered an avalanche of studies into the spin-dependent physical properties of this material and of graphene-based spintronic devices. Here, we review the experimental and theoretical state-of-art concerning spin injection and transport, defect-induced magnetic moments, spin-orbit coupling and spin relaxation in graphene. Future research in graphene spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including topological states and proximity-induced phenomena in graphene and other two-dimensional materials.
Keywords:
ELECTRICAL SPIN INJECTION
ROOM-TEMPERATURE
FERROMAGNETIC METAL
TRANSPORT
PRECESSION
SEMICONDUCTOR
ACCUMULATION
RELAXATION
POINT
MAGNETIZATION
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
34.9
Papers:
4.8K
Citations:
8.1W
Organization
Cited Papers
Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices
NATURE NANOTECHNOLOGY
IF34.9
Spin-dependent Klein tunneling in graphene: Role of Rashba spin-orbit coupling
PHYSICAL REVIEW B
IF3.7
Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
PHYSICAL REVIEW B
IF3.7

