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Half 4-inch wafer-scale 2D MoS2 with high uniformity direct bandgap grown using ion beam sputtering and vulcanization
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DOI：10.1016/j.vacuum.2024.113895.png)
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Abstract
En 中文
Two-dimensional MoS2 has been extensively developed as an alternative to silicon materials. In this research, ion beam sputtering was used to deposit high-quality Mo thin films and vulcanization was performed to successfully produce 2D-MoS2 thin films. The optimal vulcanization temperature of MoS2 measured by Raman is 1000 degrees C, and MoS2 showed excellent uniformity when grown on a half 4-inch substrate. The direct exciton transition energy of the MoS2 samples measured by photoluminescence (PL) was 1.86 eV. PL measurement results are close to the peaks of the absorption spectra, indicating that MoS2 is a direct bandgap material.
Keywords:
MoS2
Ion beam sputtering
Vulcanization
Direct bandgap
High uniformity
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3.9
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1.4W
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