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Hard X-ray-Induced Oxygen Intercalation in WO3 under High Pressure
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DOI：10.1021/acs.jpcc.6c02061.png)
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Abstract
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Hard X-ray irradiation of a mixture of KClO4 and WO3 under high pressure produces a gradual lattice expansion of WO3 accompanied by an overall decrease in WO3 diffraction peak FWHM’s, indicating irradiation-assisted defect relaxation and structural reordering rather than radiation damage. Combined X-ray diffraction (XRD) and Raman results suggest stabilization and possible intercalation of molecular O2 (produced via KClO4 + hν→KCl+2O2) within the WO3 lattice via weak host–guest interactions which remained after depressurization and release of the sample to ambient conditions. The results demonstrate that high-pressure conditions can stabilize novel intercalated compounds of the form O2·WO3, highlighting the tungsten–oxygen semiconductor system as a promising platform for irradiation-driven photochemistry, trapping of radicals such as O in the solid state, and functional material discovery.
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