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Heating ramp rate controlled growth and properties of Cu3BiS3 absorber thin films

delete2026-06-17
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PRE
AI
V
Vasudeva Reddy Minnam Reddy
Y
Y.B. Kishore Kumar
K
K. Siva Kumar
R
Radhalayam Dhanalakshmi
K
Krithikaa Mohanarangam
C
C. Parthasaradhi Reddy
H
Heba Taha Mohmmed Abdelghani
S
Sambasivam Sangaraju
U
U. Chalapathi *
DOI:10.1016/j.jssc.2026.126170delete
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Abstract

Abstract

En 中文
• Growth of Cu3BiS3 (CBS) films via a two-stage process. • Heating ramp rate (HRR) controls phase purity and crystallinity of CBS films. • 10oC/min HRR yields phase-pure, highly crystalline CBS films. • Grain growth and alignment improve with HRR up to 10oC/min. • Bandgap tunable (1.38–1.55 eV) via sulfurization HRR.

Journal

Journal of Solid State Chemistry cover
Journal of Solid State Chemistry
IF:
3.5
Papers:
1.6W
Citations:
3.0W

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