Heating ramp rate controlled growth and properties of Cu3BiS3 absorber thin films

Vasudeva Reddy Minnam Reddy

doi:10.1016/j.jssc.2026.126170

Heating ramp rate controlled growth and properties of Cu3BiS3 absorber thin films

2026-06-17

0

PRE

AI

V

Vasudeva Reddy Minnam Reddy

Y

Y.B. Kishore Kumar

K

K. Siva Kumar

R

Radhalayam Dhanalakshmi

K

Krithikaa Mohanarangam

C

C. Parthasaradhi Reddy

H

Heba Taha Mohmmed Abdelghani

S

Sambasivam Sangaraju

U

U. Chalapathi *

DOI：10.1016/j.jssc.2026.126170

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• Growth of Cu3BiS3 (CBS) films via a two-stage process. • Heating ramp rate (HRR) controls phase purity and crystallinity of CBS films. • 10oC/min HRR yields phase-pure, highly crystalline CBS films. • Grain growth and alignment improve with HRR up to 10oC/min. • Bandgap tunable (1.38–1.55 eV) via sulfurization HRR.

Heating ramp rate controlled growth and properties of Cu3BiS3 absorber thin films

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