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High-efficiency ultra-thin CIGSe solar cells: defect engineering and back-surface field design
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DOI：10.1039/D6RA02870E.png)
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Abstract
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This study presents a comprehensive SCAPS-1D simulation of an ultra-thin CIGSe/CdS/i-ZnO/ITO solar cell with a 420 nm absorber layer; focusing on the influence of key physical parameters and back surface field engineering. The effects of acceptor doping density in CIGSe (Na = 1013 to 1018 cm−3); interface defect density (Ni–t = 109 to 1018 cm−3); bulk defect density (Nt = 1012 to 1020 cm−3); and electron affinity (χ = 4.35–4.65 eV) were systematically investigated. Increasing Na significantly enhanced device performance by strengthening the internal electric field and increasing the carrier concentration; thereby improving Voc; fill factor; and efficiency. In contrast; elevated interface and bulk defect densities led to severe recombination losses and significant degradation of all photovoltaic parameters. Optimal band alignment was obtained at χ ≈ 4.35 eV; corresponding to a slight negative conduction-band offset that facilitates carrier transport and suppresses recombination. Recombination analysis showed stable performance of the radiative recombination coefficient over the range 10−16 to 10−8 cm3 s−1; while Auger recombination became dominant at coefficients above 10−23 cm6 s−1. Among the investigated back surface field layers; Cu2O provided the best performance due to its wide band gap (2.2 eV) and strong back-surface electric field; yielding a maximum simulated efficiency of ∼40.3% with Voc = 0.817 V; Jsc = 30.03 mA cm−2; and FF = 82.88%. Capacitance–voltage and Mott–Schottky analyses revealed that capacitance increases from 57.6 to 109.9 nF cm−2 with increasing Na; and the built-in potential ranges from 0.80 to 1.32 V; confirming enhanced junction properties. These results provide practical guidelines for optimizing ultra-thin CIGSe solar cells through defect control; band alignment tuning; and back surface field design.
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