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High hydrogen response of Pd/TiO2/SiO2/Si multilayers at room temperature
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DOI：10.1016/j.snb.2014.08.072.png)
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Abstract
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A series of Pd/TiO2/Sio(2)/Si multilayers were produced using magnetron sputtering method. It is found that H-2 molecules have dramatic effect on the current-voltage (I-V) characteristics of the Pd/TiO2/SiO2/Si multilayers at room temperature (RT). When Pd/TiO2/SiO2/Si multilayer is exposed to H-2, the Pd film quickly reacts with H-2 and forms palladium hydride which results in transferring more electrons from the Pd film to TiO2 film. Therefore, the I-V characteristic of Pd/TiO2/SiO2/Si multilayer was greatly changed when exposed to H-2. For example, a Pd/TiO2/SiO2/p-Si multilayer can show a high response (similar to 2431%) to 1% H-2 with appreciable short response time of 13s and recovery time of 4 s at RT. Besides, it is demonstrated that Si substrate has a great effect on the H-2 response of Pd/TiO2/SiO2/Si multilayers. When exposed to H-2 the current of Pd/TiO2/SiO2/p-Si multilayer at -0.5 V greatly decreases while the current of Pd/TiO2/SiO2/n-Si multilayer greatly increase, which can be understood by their energy band structures. (C) 2014 Elsevier B.V. All rights reserved.
Keywords:
Hydrogen response
Pd/TiO2/SiO2/Si multilayers
Current-voltage curve
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