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High-performance cavity-enhanced quantum memory with warm atomic cell

delete2022-05-02
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马丽霞 cover
马丽霞 (Lixia Ma)
X
Xing Lei
闫捷利 cover
闫捷利 (Jieli Yan)
R
Ruiyang Li
T
Ting Chai
闫智辉 (Zhihui Yan)
贾晓军 (Xiaojun Jia) *
C
Changde Xie
K
Kunchi Peng
DOI:10.1038/s41467-022-30077-1delete
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Abstract

Abstract

En 中文
Quantum memories usually suffer from a trade-off between efficiency and excess noise. Here, by exploiting the time-reversal approach for improving modes matching, the authors show a warm-atomic-cell-based cavity-enhanced memory with 67% efficiency and noise level close to quantum noise limit. High-performance quantum memory for quantized states of light is a prerequisite building block of quantum information technology. Despite great progresses of optical quantum memories based on interactions of light and atoms, physical features of these memories still cannot satisfy requirements for applications in practical quantum information systems, since all of them suffer from trade-off between memory efficiency and excess noise. Here, we report a high-performance cavity-enhanced electromagnetically-induced-transparency memory with warm atomic cell in which a scheme of optimizing the spatial and temporal modes based on the time-reversal approach is applied. The memory efficiency up to 67 +/- 1% is directly measured and a noise level close to quantum noise limit is simultaneously reached. It has been experimentally demonstrated that the average fidelities for a set of input coherent states with different phases and amplitudes within a Gaussian distribution have exceeded the classical benchmark fidelities. Thus the realized quantum memory platform has been capable of preserving quantized optical states, and is ready to be applied in quantum information systems, such as distributed quantum logic gates and quantum-enhanced atomic magnetometry.
Keywords:
ELECTROMAGNETICALLY INDUCED TRANSPARENCY
SINGLE PHOTONS
STATE
LIGHT
STORAGE
ENTANGLEMENT
INTERFACE
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Journal

Nature Communications cover
Nature Communications
IF:
15.7
Papers:
9.2W
Citations:
91.2W

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